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| savantic semiconductor product specification silicon pnp power transistors 2SA980/981/982 description with to-3 package complement to type 2sc2260/2261/2262 applications for power switching and general purpose applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit 2SA980 -100 2sa981 -120 v cbo collector-base voltage 2sa982 open emitter -140 v 2SA980 -100 2sa981 -120 v ceo collector-emitter voltage 2sa982 open base -140 v v ebo emitter-base voltage open collector -6 v i c collector current -8 a i b base current -3 a p c collector power dissipation t c =25 80 w t j junction temperature 150 t stg storage temperature -65~150 fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SA980/981/982 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2SA980 -100 2sa981 -120 v (br)ceo collector-emitter breakdown voltage 2sa982 i c =-50ma ;i b =0 -140 v v cesat collector-emitter saturation voltage i c =-3a; i b =-0.3a -1.5 v 2SA980 v cb =-100v; i e =0 2sa981 v cb =-120v; i e =0 i cbo collector cut-off current 2sa982 v cb =-140v; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-6v; i c =0 -0.1 ma h fe dc current gain i c =-3a ; v ce =-4v 30 f t transition frequency i c =-0.5a ; v ce =-12v 20 mhz switching times t r rise time 0.85 s t s storage time 2.0 s t f fall time i c =-3a;r l =4 a i b1 =-0.2a; i b2 =0.1a v cc =-12v 0.3 s savantic semiconductor product specification 3 silicon pnp power transistors 2SA980/981/982 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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